Study on the molybdenum oxide-based synaptic devices


  • Date: Oct 1, 2019
  • Time: 02:00 PM (Local Time Germany)
  • Speaker: Dr. Chuan-sen Yang
  • Institute of Physics, Chinese Academy of Sciences
  • Location: Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, 06120 Halle (Saale)
  • Room: Lecture Hall, B.1.11
Study on the molybdenum oxide-based synaptic devices
The data network-based novel technologies, such as artificial intelligence (AI), big data and the internet of things (IOT), show significant effect on every aspect of modern life. However, the traditional von Neumann architecture computers, in which memory and processing units are separated physically, are difficult to deal with massive amounts of data and complex scenarios. How to improve the efficiency of storage and computing becomes a hard nut that we need to crack. Inspired by human brain, researchers are trying hard to implement“neuromorphic” computer. The development of novel functional materials and devices, which can be incorporated into the unique neuromorphic architectures, is a promising way. In my research, I fabricated two-terminal and three-terminal resistive switching devices based on layered α-MoO3 and investigated the related physical mechanism, the influential factors and application in synaptic simulation.
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