Publikationen von Alessandro Fumarola

Minhas, M. Z.; Pandeya, A. K.; Grover, B.; Fumarola, A.; Kostanovskiy, I.; Hazra, B. K.; Hoppe, W.; Woltersdorf, G.; Bedoya-Pinto, A.; Parkin, S. S. P. et al.; Ali, M. N.: Doping-induced spin Hall ratio enhancement in A15-phase, Ta-doped β-W thin films. JPhys Materials 3 (4), 044001 (2020)

Casu, E. A.; Muller, A. A.; Cavalieri, M.; Fumarola, A.; Ionescu, A. M.; Fernandez-Bolaños, M.: A reconfigurable inductor based on vanadium dioxide insulator-to-metal transition. IEEE Microwave and Wireless Components Letters 28 (9), S. 795 - 797 (2018)

Casu, E. A.; Oliva, N.; Cavalieri, M.; Müller, A. A.; Fumarola, A.; Vitale, W. A.; Krammer, A.; Schueler, A.; Fernández-Bolanos, M.; Ionescu, A. M.: Tunable RF phase shifters based on vanadium dioxide metal insulator transition. IEEE journal of the Electron Devices Society 6 (1), S. 965 - 971 (2018)

Casu, E. A.; Müller, A. A.; Fernández-Bolaños, M.; Fumarola, A.; Krammer, A.; Schüler, A.; Ionescu, A. M.: Vanadium oxide bandstop tunable filter for Ka frequency bands based on a novel reconfigurable spiral shape defected ground plane CPW. IEEE Access 6, S. 12206 - 12212 (2018)

Fumarola, A.; Sidler, S.; Moon, K.; Jang, J.; Shelby, R. M.; Narayanan, P.; Leblebici, Y.; Hwang, H.; Burr, G. W.: Bidirectional non-filamentary RRAM as an analog neuromorphic synapse, part II: Impact of Al/Mo/Pr_0.7Ca_0.3MnO₃ device characteristics on neural network training accuracy. IEEE journal of the Electron Devices Society 6, S. 169 - 178 (2017)

Moon, K.; Fumarola, A.; Sidler, S.; Jang, J.; Narayanan, P.; Shelby, R. M.; Burr, G. W.; Hwang, H.: Bidirectional non-filamentary RRAM as an analog neuromorphic synapse, part I: Al/Mo/Pr_0.7Ca_0.3MnO₃ material improvements and device measurements. IEEE journal of the Electron Devices Society 6, S. 146 - 155 (2017)

Fumarola, A.; Leblebici, Y.; Narayanan, P.; Shelby, R.M.; Sanchez, L.L.; Burr, G.W.; Moon, K.; Jang, J.; Hwang, H.; Sidler, S.: Non-filamentary non-volatile memory elements as synapses in neuromorphic systems. In: 19th Non-Volatile Memory Technology Symposium (NVMTS), 8986194. 19th Non-Volatile Memory Technology Symposium (NVMTS), Durham, NC, USA , 28. Oktober 2019 - 30. Oktober 2019. IEEE (2019)