Lithography systems
- 100keV E-beam lithography system with 8nm minimum feature size
- 30keV E-beam lithography system with 20nm minimum feature size
- Maskless Aligner, UV litho. Minimum feature size 1um. Front and back side alignement
Dry deposition and etching systems
- Atomic layer etching + Reactive ion etching , with Cl2, SF6, O2, Ar and H2 gases
- Plasma enhanced chemical vapor deposition
- Atomic layer deposition with H2, Ar, N2, O2 and NH3 gases
- Ion beam deposition and etching with SIMS end-point detection
- Hybrid deposition system with magnetrron sputtering source and E-beam evaporation
Cleaning systems
- Oxygen plasma cleaner
- IPA dryer
- Ozone cleaner
