NISE focuses on novel materials formed from atomically thin layers that are either deposited using thin film deposition techniques of magnetron and ion beam sputtering, pulsed laser deposition, molecular beam epitaxy, or atomic layer deposition or by exfoliation from van der Waals crystals.
We have equipped a 150m2 lab with a unique set of thin film deposition systems and in-situ characterisation systems.
With the support of the European regional Development Fund (ERDF) we have acquired an oxide-nitride molecular beam epitaxy (MBE) system composed of:
- GEN10 Veeco epitaxy cluster composed of an oxide growth module with highly concentrated ozone and a nitride growth module with N2 plasma source,
- an oxide MBE Pulsed Laser Deposition
- an angle-resolved photoemission spectroscopy (ARPES) with spin detector from SPECS GmbH.
Thanks to our excellent modelshop and software development team we have developed
- two bespoke sputtering deposition systems with 36 different material each – 12 materials available for co-evaporation of three ion beam sources, 24 materials available for single or co-evaporation from DC and RF magnetron sputtering sources. The system is highly automated with the loading of 10 samples in a cassette at a time in a separated load-lock. All materials can be exchanged without venting the growth chamber.
- a bespoke XPS
For the exfoliation of 2D materials the lab is finally equipped with
- a glovebox that hosts a motorised 2D transfer system
