Transmission Electron Microscopy

Transmission Electron Microscopy

Our goal is to push the limits of what’s possible in electron microscopy to better understand materials at the most fundamental levels. With the rapid evolution of EELS, 4D-STEM and other microscopy techniques, we see an opportunity to redefine how we explore materials — from mapping atomic-scale bonding environments to quantifying strain, polarization, and electronic structure with unprecedented clarity. Specifically, we want to apply these techniques to frontier research problems in quantum materials, nanoelectronics, spintronics, data storage, and beyond.
 

The TEM specimen preparation is performed in-house using conventional and advanced techniques e.g. TESCAN focused ion beam Xe-FIB and Ga-FIB , PIPS II systems from GATAN and 1080 PicoMill from Fischione.

A 200kV and 300kV state-of-the-art transmission electron microscopes have been recently installed and commissioned in a dedicated building.

JEM-ARM300F2 (300, 80 kV) GrandARM – Latest generation highest-end TEM/STEM

Resolution – TEM 60pm / STEM 70pm
Source and image aberration correction
In TEM mode
•1x CMOS camera with 4k x4k pixels
•In STEM mode
•ADF (annular dark-field) detector
•ABF – annular bright-field detector
•4D-STEM – pixelated detector 264x264 pixels EDX – equipped with two energy-dispersive X-ray spectrometer

In Energy-filtered TEM/STEM mode
•EELS – electron energy filter/spectrometer
•CMOS camera with 4kx4k pixels for energy filtered imaging

In Lorentz TEM and holography
•Biprism for holography

JEM-F200 (200 kV) - Latest generation midrange TEM/STEM
Resolution – TEM 230 pm (point) / STEM 190 pm

In TEM and Lorentz TEM modes
•CMOS camera with 2k x 2k pixels

In scanning TEM mode
•EDX (energy-dispersive X-ray) spectrometer
•ADF (annular dark-field) detector

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