Jaewoo Jeong

Samsung Semiconductor Inc., USA

“Ferrimagnetic Heusler Alloys for Scalable and Low-Power MRAM: Fast Switching and High TMR”

Biography

EDUCATION 
Doctorate of Philosophy, Physics, February 2005 
Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea 

RESEARCH EXPERIENCE 

Sr. Director 
MRAM Lab., Samsung Semiconductor Inc. San Jose, CA, USA
California 95053, USA, February 2017-present 

Advisory Engineer 
SpinAps, IBM Almaden Research Center, 650 Harry Rd, San Jose, CA95120-6099 
USA, September 2013 – 2017 January 

Research Assistant/Postdoctoral Researcher 
University of California at Santa Barbara, Material Department, Santa Barbara 
SpinAps, IBM Almaden Research Center 
USA, September 2010 – 2013

 HIGHLIGHTS OF CAREER 
Intensive research/industrial experience (15+ years) via leading Advanced Materials and fabrication team (MRAM Lab.) at Samsung Electronics in USA, involved in development of World’s first embedded MRAM product in 28nm node. 
Managed IBM, Max Planck, and Samsung collaboration as a team leader.