Jingsheng Chen

National University of Singapore, Singapore

“Effective electrical manipulation of non-collinear antiferromagnetic order”

Biography

Prof. Jingsheng Chen is currently with Department of Materials Science and Engineering, NUS. He obtained his Ph.D degree in 1999 in Lanzhou University, China and joined NUS in December 2007. During 2001-2007 he worked at the Data Storage Institute as a research scientist. He has authored/co-authored more than 300 refereed journal papers including Nature, Nature Nanotechnology, Nature Materials, Nature Comm. Science Advance, Advanced Materials, Physical Review X, Physical Review Letter etc., 3 book chapters, holds over ten patents and has made more than 100 invited presentations in the international conferences. His research work has obtained more than 17000 citations with H index of 71. His research interest includes magnetic, and oxide based non-volatile memories, spintronics, ferroelectric tunnel junction, strongly correlated oxide materials. He secured more than S$ 17 million research grants from government and around US$ 1 million from Seagate Technology and more than S$ 1 million from Globalfoundries. The magnetic recording media in the newest generation of HDD (HAMR) utilized a few of his inventions. He is IEEE Fellow and 2022 IEEE Magnetic Society Distinguished Lecturer.